IGBT and MOSFET Testing Solutions
LEMSYS proposes a wide range of testing solutions, from Wafer level to complex Power Modules, including Chip devices, DBC substrates and discrete devices.
Three product family ranges are available:
LEMSYS proposes a wide range of testing solutions, from Wafer level to complex Power Modules, including Chip devices, DBC substrates and discrete devices.
Three product family ranges are available:
Transistormeter LEMSYS model SLIC-AC. For testing switching characteristics of Slow-SiC MOSFET
Up to 3000A and 1500V with 11kA for short-circuit tests.
For testing Switching characteristics: up to 600A and up to 1500V. Short-circuit test up to 2500A. For testing Static characteristics: up to 2000A and up to 10 kV for the static tests.
AC only, DC only and AC-DC versions.
Applicable for production tests as well as device characterisation and laboratory tests.
Adapted for Wafers (DC only) , Chip devices, DBC substrates, discrete devices and complex power modules up to 7 legs.
Unmatched
– Price / Performance ratio
– Overall adaptability
– Very low stray inductance: < 35 nH
– Measurement systems: ≥ 50 MHz
The equipment is designed to test IGBTs, MOSFETs and free wheeling Diodes from single chip to complex power modules and IPMs.
High speed and simplicity of use for the production tests.
Characterisation and validation on laboratory mode.
Data transfer facility for quality statistical analyses.
One of the key unique features of the equipment is its ability to make static, dynamic, avalanche and short-circuit tests, on the same test head, without removing or reconnecting the device under test.